Typical Properties
Dopant
Type
Carrier Concentration
( cm-3)
Mobility
( cm2/V.Sec)
Resistivity
( ohm-cm )
EPD
(cm-2)
Undoped
N
0.8 ~ 2.0 x1015
3600 ~ 4000
0.03 ~ 0.2
5~6 x104
Sn
0.5 ~1.0 x1018
200 ~ 2400
1500 ~ 2000
0.001 ~ 0.002
0.0025~0.007
3~5 x104
Zn
P
0.8 ~ 2.0 x1018
2.5 ~ 4.0 x1018
2500 ~ 3500
1300 ~ 1600
0.0025 ~ 0.006
1~ 3 x104
Fe
0.1 ~ 1.0
2000
107 ~ 108
4~ 5 x104
Standard Products
Products
Dimension ( mm )
Orientation
Others
Ingot
2¡± dia x 200 mm L
3¡± dia x 100 mm L
<100>
Purity > 99.9999%
epi polished wafer
2¡± dia x 0.3 mm
3¡± dia x 0.5 mm
<100>, <110> ,<111>
or
customer specs
epi ready are available upon request