|
|
Purity wt%
Impurity:
wt%
|
> 99.99
Mg:
<.0005 Al: <
.0030 Si: 0.0030 Ti:
.0010 Cu: <
.0030
Fe: <
0.005 Ca: <.0005 Ag: < .0002
|
Crystal
Structure
|
Hexagonal: a= 3.252 å , c = 5.313 å
|
Growth
Method
|
Hydrothermal
|
Hardness
|
4 moh scale
|
Density
|
5.7 g/cm3
|
Melt Point
|
1975 oC
|
Specific heat
|
0.125 cal/gm
|
Thermoelectric
Constant
|
1200 mV /oK @ 300 oC
|
Thermal
conductivity
|
0.006
cal/cm/ oK
|
Thermal
expansion
|
2.90 x 10-6/oK
|
Transmission
range
|
0.4 - 0.6 m > 50% at
2 mm
|
Dislocation
Density
|
<0001>
plane <100 / cm2
|
Availability of Standard Substrate
|
Orientation
|
<0001>
|
Polished
surface
|
EPI
polished on one side or two sides
to Ra < 10 Å
|
Standard
Size
|
10x10 mm
, 5 x 5 mm and 20x20 mm
|
Thickness
|
0.35
mm, 0.5 mm and 1.0 mm
|