GaN Wafer : Gallium Nitride template on SiC

[ Gallium Nitride template on SiC ]

제조업체 :

SCSA

납기일 :

발주후 2주~4주

부가세 :

부가세 별도

Untitled Document

Gallium Nitride template on SiC

substrate for
III-V Nitrides Epitaxy

Material parameters

*Parameter*	*Value*
Typical thickness of GaN, microns	0.2-0.8
Initial substrate	(0001) on axis 6H-SiC or 4H-SiC
Diameter, inch	2
Surface of GaN	As grown
FWHM of X-ray w-scan rocking curve, arcsec	< 250
Concentration N_d – N_a cm^-3	10¹⁷ – 10¹⁸
Exclusion area	2 mm periphery region

Contact wafermart

Applications

GaN Epitaxial Wafers may be used as substrates for III-V nitride epitaxial growth by MBE, MOCVD and CVD.
No buffer layer is required.
GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.

Technology
Gallium Nitride Epitaxial Wafer (template) consists of a thin undoped GaN epitaxial layer grown by Hydride Vapor Phase
Epitaxy (HVPE) directly on (0001)Si face on-axis 6H-SiC or 4H-SiC substrate.

Additional information

GaN layers and SiC substrates are electrically conducting. Silicon carbide insures excellent heat removal from nitride
device structure, which is important for high-power devices. GaN/SiC wafers may be cleaved providing mirror-like facets
for nitride laser diodes.

GaN layers could be grown on SiC substrates supplied by customers.

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