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1. Si wafer Spec È®Á¤½Ã °í·ÁÇÏ¼Å¾ß ÇÒ ³»¿ë
1. Size : 2¡± , 3¡± , 4¡± ,5¡± ,6¡± ,8¡± ,12¡± ¹× Dicing°øÁ¤ Ãß°¡·Î ¿øÇϽô Square type size·Î ÀÛ¾÷ °¡´É
2. Type/Dopant : Undopped Type ( °íÀúÇ× Wafer) ,
PŸÀÔ ( Boron Dopant) ,
N ŸÀÔ (Phos ,Antimony , Arsenic Dopant)
3. Orientation : <100>,<110>,<111>
4. Resitivity : <0.005ohm.cmÀÇ ÀúÀúÇ× wafers (High Dopped) ,
1-100ohm.cm ÀÇ Normal wafer
>1,000 ohm.cm ÀÇ °í ÀúÇ× wafers
Undopped wafers µî °í°´ ¿øÇϽô ÀúÇ×°ªÀ¸·Î ±Ù»çÄ¡ Á¢±Ù °¡´É
5. Thickness
*CMP Ãß°¡ °øÁ¤À» ÇÏ¿© µÎ²² >50umÀÌ»óºÎÅÍ ¿øÇϽô Thcikness·Î °ø±Þ °¡´É
6. TTV ( Total Thickness Variation ) : <15um ÀÌÁö¸¸, CMP°øÁ¤ Ãß°¡·Î ÃÖ¼Ò 2um±îÁö °øÁ¤ °¡´É
7. Surface Finished: Single Side Polished , Double Side Polished
8. Grade : Dummy , Test , Prime
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