Final Cleaning
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Final Cleaning: The next step in the process after polishing is a rather intense regimen of cleans and scrubs to remove trace metals, residues and particles from the surface(s) of the finished Silicon wafers. Normally most wafer manufacturers use a final cleaning method developed by RCA in the 1970's the first part of this clean is called SC1 and consists of Ammonium Hydroxide followed by a dilute Hydrofluoric acid clean followed by a DI water Rinse. Next the SC2 clean which consists of Hydrochloric acid and Hydrogen peroxide followed by a DI water rinse. Many companies modify these cleans to make them even more effective. After all this cleaning and rinsing the finished wafers will now go through a front and backside scrub to remove even the smallest particles

 
 
Total 20 °Ç
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20   Epitaxy °ü¸®ÀÚ 07-01-26 2736
19   Defects °ü¸®ÀÚ 07-01-26 3091
18   Resistivity °ü¸®ÀÚ 07-01-26 2922
17   Bow & Warp °ü¸®ÀÚ 07-01-26 3454
16   Site TIR or Total Indicator Reading °ü¸®ÀÚ 07-01-26 1790
15   Total Thickness Variation °ü¸®ÀÚ 07-01-26 1001
14   N-Type wafers °ü¸®ÀÚ 07-01-26 897
13   P-Type wafers °ü¸®ÀÚ 07-01-26 1504
12   Particles °ü¸®ÀÚ 07-01-26 809
11   Final sort and inspection °ü¸®ÀÚ 07-01-26 899
  Final Cleaning °ü¸®ÀÚ 07-01-26 872
9   Polishing °ü¸®ÀÚ 07-01-26 937
8   Lapping °ü¸®ÀÚ 07-01-26 981
7   Slicing °ü¸®ÀÚ 07-01-26 863
6   Next the finished Ingot °ü¸®ÀÚ 07-01-26 845
  
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