P-Type wafers
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P-Type wafers are Prime or Test wafers that have Boron as the main dopant. A P+ wafer is heavily doped with Boron <1 Ohm/cm2 (normally will be used as an Epi substrate). A P- wafer is lightly doped with Boron and usually has a resistivity >1 Ohm/cm2 an example would be 5-10 Ohm/cm2. P-type wafers can have a 100 orientation (most common) or a 111 orientation (the 111 substrate is normally used for Bi-polar devices). Note: We do not recommend using 111 material for R & D Etch or lithography purposes Because it breaks into pie shaped pieces when it is cleaved and it is therefore no good for SEM. analysis.


 
 
Total 20 °Ç
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20   Epitaxy °ü¸®ÀÚ 07-01-26 2736
19   Defects °ü¸®ÀÚ 07-01-26 3092
18   Resistivity °ü¸®ÀÚ 07-01-26 2922
17   Bow & Warp °ü¸®ÀÚ 07-01-26 3456
16   Site TIR or Total Indicator Reading °ü¸®ÀÚ 07-01-26 1791
15   Total Thickness Variation °ü¸®ÀÚ 07-01-26 1002
14   N-Type wafers °ü¸®ÀÚ 07-01-26 897
  P-Type wafers °ü¸®ÀÚ 07-01-26 1505
12   Particles °ü¸®ÀÚ 07-01-26 809
11   Final sort and inspection °ü¸®ÀÚ 07-01-26 899
10   Final Cleaning °ü¸®ÀÚ 07-01-26 872
9   Polishing °ü¸®ÀÚ 07-01-26 938
8   Lapping °ü¸®ÀÚ 07-01-26 982
7   Slicing °ü¸®ÀÚ 07-01-26 863
6   Next the finished Ingot °ü¸®ÀÚ 07-01-26 845
  
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