P-Type wafers are Prime or Test wafers that have Boron as the main dopant. A P+ wafer is heavily doped with Boron <1 Ohm/cm2 (normally will be used as an Epi substrate). A P- wafer is lightly doped with Boron and usually has a resistivity >1 Ohm/cm2 an example would be 5-10 Ohm/cm2. P-type wafers can have a 100 orientation (most common) or a 111 orientation (the 111 substrate is normally used for Bi-polar devices). Note: We do not recommend using 111 material for R & D Etch or lithography purposes Because it breaks into pie shaped pieces when it is cleaved and it is therefore no good for SEM. analysis.
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